s mhop microelectronics c orp. a sdu/d03n50 product summary v dss i d r ds(on) ( ) typ 500v 2.6a 2.0 @ vgs=10v www.samhop.com.tw dec,24,2013 1 details are subject to change without notice. symbol v ds v gs i dm w a p d c -55 to 150 i d units parameter 500 2.6 10.4 v v 30 t c =25 c gate-source voltage drain-source voltage absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b maximum power dissipation operating junction and storage temperature range t j , t stg t c =25 c a t c =100 c a 1.64 t c =100 c w e as mj single pulse avalanche energy d 260 green product n-channel logic level enhancement mode field effect transistor features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. 45 18 thermal characteristics 50 c/w thermal resistance, junction-to-ambient r ja 2.78 c/w thermal resistance, junction-to-case r jc e ver 1.1 g s sddss s g s d g s d sddss sdss d d ordering information ordering code package marking code delivery mode rohs status sdd03n50hs to-251s to-251l sdd03n50 sdd03n50 tube tube halogen free sdu03n50hz to-252 sdu03n50 reel halogen free sdd03n50hl halogen free
4 symbol min typ max units bv dss 500 v 1 i gss 100 na v gs(th) 2 v v sd c iss 350 pf c oss 55 pf c rss 6 pf q g 12 nc 45 nc q gs 20 nc q gd 30 t d(on) ns t r 2.5 ns t d(off) 4.7 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =250v i d =1.0a r gen =25 ohm total gate charge rise time turn-off delay time v ds =400v,i d =1.0a,v gs =10v fall time turn-on delay time ohm v gs =10v , i d =1.3a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =400v , v gs =0v v gs = 30v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 4 2.7 c f=1.0mhz c v ds =400v,i d =1.0a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2.6a v notes www.samhop.com.tw dec,24,2013 2 10 _ _ a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=40mh,v dd = 50v. e.drain current limited by maximum junction temperature. 2.0 1.4 ver 1.1 _ sdu/d03n50 460 70 8 30 100 50 70 13
www.samhop.com.tw dec,24,2013 3 ver 1.1 sdu/d03n50
www.samhop.com.tw dec,24,2013 4 ver 1.1 sdu/d03n50 figure 9-3. maximum safe operating area for to251, to252 figure 10. maximum drain current vs case temperature fi g ure 11-3. transient thermal res p onse curve for to251/ to252
sdu/d03n50 ver 1.1 www.samhop.com.tw dec,24,2013 5 to-252 l3 b2 b l2 l a1 l1 a max min c c2 d d1 e h e1 millimeters symbols e b3 e b3 h l3 d l4 b2 b e 1 2 3 a c2 c e1 d1 l1 a1 l2 detail "a" detail "a" 2.200 2.380 0.000 0.127 0.635 0.889 0.762 1.143 5.200 5.460 0.450 0.600 0.450 0.580 6.000 6.223 5.210 2.286 bsc 6.400 6.731 4.318 9.400 10.400 l4 1.400 1.770 2.743 ref l 0.508 bsc 0.890 1.270 0.640 1.010 0 10 4.900 5.380
www.samhop.com.tw 6 package outline dimensions to-251s b3 d e d1 12 3 l4 e l5 h b4 b2 b e1 a c2 l c symbol millimeters min max e 6.350 6.731 l 3.700 4.400 l4 0.698 ref l5 0.972 1.226 5.970 d6.223 h 9.670 11.450 b 0.630 0.850 b2 0.760 1.140 4.950 b3 5.460 b4 0.450 0.550 e 2.286 bsc a 2.180 2.390 c 0.400 0.610 0.400 0.610 c2 d1 5.100 e1 4.318 ver 1.1 dec,24,2013 sdu/d03n50
ver 1.1 www.samhop.com.tw dec,24,2013 7 package outline dimensions sdu/d03n50 to-251l a1 d a e l1 b1 b2 e c e1 c1 symbol millimeters min nom a 6.40 6.50 a1 5.30 5.40 a2 4.30 b 1.35 1.50 l1 l d 5.40 5.55 c0.55 0.60 c1 e1 1.72 e 2.20 2.30 0.60 0.75 b1 b 4.40 1.77 l b2 1.55 ref 7.40 7.70 0.70 0.85 a2 b4 b3 b3 b4 e max 6.60 5.50 4.50 1.65 8.00 5.70 0.65 0.49 0.54 0.59 1.82 2.40 0.80 0.90 2.30
ver 1.1 www.samhop.com.tw dec,24,2013 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h sdu/d03n50
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) sdu03n50 smc internal code no. (a,b,c...z) ver 1.1 sdu/d03n50 dec,24,2013
www.samhop.com.tw 10 top marking definition to-251s ver 1.1 sdu/d03n50 dec,24,2013 to-251l xxxxxx product no. samhop logo sdd03n50 wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) smc internal code no. (a,b,c...z) xxxxxx sdd03n50 production year (2009 = 9, 2010 = a.....) production month (1,2 ~ 9, a,b,c) production date (1,2 ~ 9, a,b.....) wafer lot no. smc internal code no. (a,b,c...z)
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